针对未来移动通信对射频前端器件提出的多频率、高集成新要求,开展了兼具声表面波(SAW)谐振器和薄膜体声波谐振器(FBAR)技术特点的新型横向激励兰姆波谐振器研究。该文介绍了基于c 轴择优取向氮化铝(AlN)压电薄膜的C波段横向激励薄膜体声波谐振器(XBAR)的结构设计、参数优化和制备方法,并进行了工艺验证。通过剥离和刻蚀等步骤制备了谐振频率4.464 GHz、品质因数3 039、品质因数与频率之积(f ×Q )达到1.56×1013 GHz、面积小于0.12 mm2 的低杂波XBAR谐振器,并仿真分析了其用于射频滤波器的可行性。该研究为进一步研制多频率、高集成的小型化XBAR滤波器组件提供了有效的设计技术和工艺技术支撑。

Considering the new requirements for multiple frequencies and high integration in RF front-end devicesfor future mobile communication, this study examines a novel laterally excited Lamb wave resonator that exhibitsboth SAW and FBAR technical characteristics.The structure design, parameter optimization, and preparation methodfor a C-band laterally excited bulk acoustic resonator (XBAR) based on a c-axis optimally oriented aluminum nitridepiezoelectric film are proposed, and the process is validated.Two XBAR samples with spurious mitigation werefabricated using lift-off and ICP-RIE, achieving a resonant frequency of 4.464 GHz, a quality factor of 3 039, andan f×Q product of 1.56×1013 GHz in a footprint smaller than 0.12 mm2 .The application potential of the preparedresonators in an RF filter was simulated and analyzed.This study provides an effective design and process technologysupport for the further development of multi-frequency and highly integrated miniaturized filter modules.

TN384;TN65;TN713

重庆市博士后科学基金资助项目(CSTB2023NSCQ-BHX0030)