A temperature compensated thin film bulk acoustic resonator(TC-FBAR) based on cavity structure is introduced in this paper. By growing a temperature compensation layer (SiO₂) above the piezoelectric layer, the low temperature drift of resonator has been realized. The temperature coefficient of frequency of thin film bulk acoustic resonator without temperature compensation is about -25×10-⁶/℃. Through proper film structure design, the temperature coefficient of frequency can be controlled within ±3×10^-6 /℃. It is found that the overall piezoelectric effect of the device is reduced by adding a temperature compensation layer, resulting in the reduction of the effective electromechanical coupling coefficient. The realization of the low temperature drift resonator can provide supports of effective design and process for developing the narrow band filter with low temperature drift.