As an emerging piezoelectric micro-electro-mechanical system(MEMS) acoustic device, the Lamb wave resonator has the features of high operating frequency, high k2t, high Q and low power consumption simultaneously. Its process is compatible with the integrated circuits and is promising to realize multi-frequency devices on a single wafer. The acoustic filter based on the Lamb wave resonator is one of the effective solutions to realize high-performance RF front-end modules, which can meet the development requirements of multi-frequency and integration of communication equipment in the future, thus the research on the Lamb wave devices has become a hot spot in the field of micro-acoustic devices. In this paper, the basic principle of the Lamb wave is introduced. The latest achievements in the research on piezoelectric MEMS Lamb wave devices based on AlN thin films and lithium niobate thin films (LNOI) in recent years are reviewed. Finally, the development trends of piezoelectric MEMS Lamb wave devices are discussed.