Bi2O3掺杂0.35PNN-0.60PZT-0.05V2O5陶瓷的低温烧结特性研究
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国家自然科学基金资助项目(21263006)

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Study on Lowtemperature Sintering Performance of Bi2O3 Doped 0.35PNN-0.60PZT-0.05V2O5 Ceramic
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    摘要:

    采用传统固相反应法制备了Bi2O3掺杂的0.35PNN-0.60PZT-0.05V2O5压电陶瓷。通过 X 线衍射、扫描电镜等测试手段对其烧结特性、晶体结构、微观形貌和介电性能进行研究。结果表明,Bi2O3掺杂能降低035PNN-0.60PZT-0.05V2O5陶瓷的烧结温度,影响相结构,改变微观形貌,并优化电学性能。当Bi2O3的质量分数为1.0%时,0.35PNN-(0.60-w%)PZT+0.05V2O5+w%Bi2O3实现900 ℃烧结,表现出优异的电学性能:压电常数d33=580 pC/N,机电耦合系数kp=0.65,介电常数εr=6 100,介电损耗tan δ= 0.006 1,品质因数Qm=65。

    Abstract:

    The Bi2O3 doped 0.35PNN-0.60PZT-0.05V2O5 ceramics were prepared by the conventional solid phase reaction method.The sintering characteristics, crystal structure, microstructure morphology,and dielectric properties were investigated by the Xray diffraction,scanning electron microscope (SEM).The results showed that Bi2O3 additives could lower the sintering temperature,affect the phase structure,changed the micromorphology and optimize the dielectric properties of 0.35PNN0.60PZT0.05V2O5 ceramics.The 0.35PNN-(0.60-w%)PZT+005V2O5+w%Bi2O3 ceramics doped with mass fraction of 1.0% Bi2O3 sintered at 900 ℃ had the optimal dielectric properties with the piezoelectric constant of d33=580 pC/N,electromechanical coupling coefficient of kp=0.65,dielectric constant of εr=6 100,dielectric loss of tan δ=0.006 1,and quality factor of Qm=65.

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张虽栓, 杨文玲, 李秋红, 赵宗彦. Bi2O3掺杂0.35PNN-0.60PZT-0.05V2O5陶瓷的低温烧结特性研究[J].压电与声光,2017,39(4):605-609. ZHANG Suishuan, YANG Wenling, LI Qiuhong, ZHAO Zongyan. Study on Lowtemperature Sintering Performance of Bi2O3 Doped 0.35PNN-0.60PZT-0.05V2O5 Ceramic[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2017-08-14
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