The hydrogenated amorphous silicon thin films were fabricated by the plasma source CVD equipment.The samples were characterized by step profiler,UVVisNIR spectrophotometer,XRD and SEM.The uniformity of the deposited film was analyzed,and the surface morphology of the film prepared by the equipment and the conventional electron beam evaporation equipment was compared.The experimental results show that the film deposition rate is the highest when the power is 300 W,the silane/hydrogen flow ratio is 15∶10,the chamber pressure is 7×10-5 mbar,and the upper and lower coil current ratio is 6∶2.