BaSn0.94Sb0.06O3 thin films were successfully prepared by the reactive RF magnetron sputtering technique. The effect of annealing temperature on the microstructure and electrical propertyof the thin films wasinvestigated. The thin films presented the (110)oriented crystal structure.The surface roughness of the BaSn0.94Sb0.06O3 film was 0.8 nm at the annealing temperature of 850 °C.The resistivity of the films annealedat temperatures of 730~850 ℃decreased sharply from 426.74 Ω·cm to 31.28 Ω·cm. The thin film showed a linear negative temperature coefficient(LNTC) thermistor behavior when annealed at 790~850 ℃. A complex impedance map study was performed on the film.The results showed that the film grain and grain boundary exhibited good linear negative temperature coefficient (LNTC) thermal sensitivity with the increase of annealing temperature.