The currentvoltage (I-V) characteristics of the SOIbased grating controlled lateral PIN blue/violet photodetector at -25~75 ℃ were studied by model establish, numerical calculation and software simulation. The analytical model of the effect of temperature on the gate voltage has been established and validity of the model is verified by the numerical calculation and software simulation. The electron concentration on the surface of channel, photo current, dark current and SNR is simulated by ATLAS module in SILVACO software. The results show that the electron concentration on the surface of channel and dark current increase with the rise of temperature, the effect of temperature on the photocurrent is not obvious, and the SNR decreases with the increase of temperature. The SNR reaches a maximum value of 6.11×105 when the temperature is -25 ℃ and the gate voltage is 1.44 V, while falls to a minimum value of 1.064 ×103 when the temperature is 75 ℃ and the gate voltage is 2 V.