高耐压LDMOS用的高K薄膜湿法刻蚀研究
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Research on Wet Etching of High K Thin Films Used in the LDMOS Power Devices
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    摘要:

    为了对横向双扩散MOSFET(LDMOS)器件所采用的锆钛酸铅(PZT)高介电常数(高K)薄膜进行微图形化,对湿法刻蚀过程中腐蚀液、光刻、刻蚀等工艺进行了优化研究,发现由BOE+HCl+HNO3+H2O+缓冲剂组成的腐蚀液刻蚀效果较好。刻蚀结果表明,所刻蚀薄膜的厚度约为600 nm,最小线条宽度约为3 μm,侧蚀比减小到1.07∶1,符合功率器件制备的尺度要求,由此所制备的LDMOS器件耐压提高了近2倍。

    Abstract:

    For the micro pattern study of high permittivity (high K) thin films PZT used in high voltage LDMOS power devices,the etching solution, lithography and etching process parameters of the wet etching technique had been optimized.The etching solution composed of BOE+HCl+HNO3+H2O+buffer owned preferably etching effect.The tested result showed that the smallest etched lines of PZT films were about 600 nm thick,3 μm wide,and lateral erosion ratio was reduced to 1.07∶1,which met the requirements of power device fabrication requirements.The breakdown voltage of the LDMOS device with high K thin films has been increased nearly 2 fold.

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王伟宾,霍伟荣,赵远远,王姝娅,束平,张国俊.高耐压LDMOS用的高K薄膜湿法刻蚀研究[J].压电与声光,2012,34(1):114-117. WANG Weibin, HUO Weirong, ZHAO Yuanyuan, WANG Shuya, SHU Ping, ZHANG Guojun. Research on Wet Etching of High K Thin Films Used in the LDMOS Power Devices[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2013-04-09
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