ZnO thin films were prepared by radio frequency(RF) reactive magnetron sputtering on Pb(Zr0.52Ti0.48)O3(PZT)/Pt/Ti/SiO2/Si(PZT) substrates, The influence of post annealing temperature on the structural, morphological and electrical properties of ZnO films was investigated by XRD,AFM and Hall effect measurement system. The results showed that after annealing at 600 ℃ the ZnO films (002) with high C orientation, small surface roughness, dense and uniform gains were provided. When annealing temperature increased, the resistivity decreased firstly and then increased. The ZnO films annealed at the annealing temperature of 600 ℃ had the lowest resistivity.