By using the ZnO with the purity of 99.9% and the mass fraction of 98%,the ceramic target of 2% Al2O3 as the sputtering target material,the Al2O3 dopping ZnO film was prepared on the glass substrate pre deposited ZnO and Al2O3 by the magnetic sputtering method.The effect of two different ZnO and Al2O3 buffer layers on the micro structure and opto electronic performance of AZO film was investigated and contrasted.The XRD,SEM and UV Vis method was also used to measure and analyze the effect of different buffer layer on the structure and opto electronic performance of AZO film.The results showed that at the substrate temperature of 200 ℃,sputtering time of 30 min,bias voltage of 60 V and the annealing temperature of 300 ℃ in N2 atmosphere,the prepared film exhibited the average transmission of 83%~87% in the visible light,and the lowest resistivity of AZO thin film decreased from 9.2×10-4 Ω·cm (glass) to 8.0×10-4 Ω·cm (ZnO) and 5.4×10-4 Ω·cm (Al2O3) respectively.