A new type of MEMS piezoresistive acceleration sensor is put forward. The structure of this sensor is “4 beam/mass” with completely symmetric distribution of 16 varistors in the stress linear region of the beam. The advantages of this structure are that the sensitivity of the sensor is improved, and the cross axis couple degree and non linearity are decreased. Compared with the sensor with “8 beam/mass” structure, it can be concluded that this acceleration sensor has larger anti lateral coupling degree, which is about 30 times higher than that of “8 beam/mass” structure.