PZT thick film as pyroelectric material has been prepared on the Pt/Ti/SiO2/Si substrate by using the electrophoresis deposition (EPD) method.In order to prevent the inter diffusion between Pb and Si,a TiOx film barrier layer between Pt bottom electrode and SiO2/Si substrate has been prepared by using the DC magnetron sputtering method.The inter diffusion between Pb and Si in PZT thick film material with TiOx barrier layer thickness of 0,300 nm and 500 nm respectively have been characterized by SEM and EDS.The pyroelectric coefficient has been measured by the dynamic pyroelectric coefficient instrument.The results show that the inter diffusion between Pb and Si can be blocked when the thickness of TiOx barrier layer is 500 nm and have the best pyroelectric properties. The pyroelectric coefficient, relative dielectric constant,dielectric loss and detectivity figure of merit are p=1.5×10-8C·cm-2K-1,εr=170，tan δ=0.02 andFd=1.05×10-5Pa-0.5 respectively.