溅射时间对氧化钒薄膜性能的影响
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安徽省红外与低温等离子体重点实验室基金资助项目(2010A001004D)

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Effects of Sputtering Time on the Electric Properties of Vanadium Oxide Films
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    摘要:

    采用直流磁控溅射法在普通玻璃上制备了氧化钒薄膜,并对薄膜采取了450 ℃真空退火处理,分别测量了退火前后薄膜XRD图谱及电阻,比较了不同溅射时间(120 min、100 min、60 min)对薄膜性能的影响。结果表明,溅射时间增长,薄膜的结晶度也增强,经过退火处理,薄膜的电阻明显减小,且溅射时间越长,薄膜的阻值越小,3块薄膜的电阻分别达到16.0 MΩ、65.0 MΩ、71.5 MΩ,其随温度变化的幅度也越小。

    Abstract:

    The vanadium oxide thin films are prepared by DC magnetron sputtering on normal glass. Then the samples are annealed at 450 ℃ in vacuum. The XRD pattern and the resistors of thin films are measured before and after annealing. And the effects of different sputtering time(120 min、100 min、60 min) on the properties of vanadium oxide films are compared. The results show that the degree of crystallinity of the films enhanced with the time extends. And the resistors of thin films are significantly reduced after annealing. The resistors of three thin films are 16.0 MΩ、65.0 MΩ、71.5 MΩ respectively. The sputtering time is longer; the resistance is smaller, while the temperature change in amplitude is smaller.

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张鹏,路远,乔亚.溅射时间对氧化钒薄膜性能的影响[J].压电与声光,2013,35(3):426-428. ZHANG Peng, LU Yuan, QIAO Ya. Effects of Sputtering Time on the Electric Properties of Vanadium Oxide Films[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2013-06-19
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