The sintering characteristics, microwave dielectric properties, phases and microstructure of Cu doped ZnTiNb2O8 ceramics prepared by solid state reaction method have been investigated systematically. It was found that the addition of Cu powder lowered the sintering temperature of ZnTiNb2O8 ceramics to 950 ℃. The results showed that the microwave dielectric properties of Cu doped ZnTiNb2O8 ceramics were strongly dependent on densification, crystalline phases and grain size. The specimen with 3.0wt% of Cu powder additive sintered at 950 ℃ for 3 h possessed an excellent combination of microwave dielectric properties: εr=30.2,Q×f=27 537 GHz (f=6.774 3 GHz),τf=-57.1 μ℃-1. Due to their good dielectric properties, the Cu doped ZnTiNb2O8 ceramics are very promising candidate for LTCC dielectric materials.