The high frequency (1.1 GHz) SAW filter with insertion loss of 3.7 dB,bandwidth of 3.8 MHz and the out of band rejection higher than 50 dB is fabricated on LBO (Li2B4O7) substrate.This paper presents the design and process of device,analyses the surface treatment of substrate,device fabrication,SiO2 protective film and temperature character by experiments,and discusses the consideration of design.The experimental results show that good interdigital electrode profile can be obtained by dry etching process.It can improve device reliability and temperature stability by depositjing SiO2 protective film on device surface.