磁控溅射氧化钒相变薄膜的电阻温度特性测量
作者:
作者单位:

作者简介:

通讯作者:

基金项目:

红外与低温等离子体安徽省重点实验室基金资助项目(2010A001004D)

伦理声明:



The Resistance temperature Curve Measurement of Magnetron Sputtering Vanadium Dioxide Film Presenting a Phase Transition
Author:
Ethical statement:

Affiliation:

Funding:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
    摘要:

    利用MS500 B超高真空磁控溅射镀膜机,分别采用氧化法和还原法在普通玻璃基底上制备了二氧化钒(VO2)相变薄膜;并在20~80 ℃内往复变化时,利用XMT 100数字精密温度计和SX1934数字四探针测试仪测量两类样品的电阻 温度特性曲线。结果表明,两类样品均具有热敏相变特性;氧化法制备薄膜的电阻为9.96~0.06 kΩ,相变温度约为30 ℃;还原法制备薄膜的电阻为80.3~7.4 kΩ,相变温度约为52 ℃。

    Abstract:

    The vanadium dioxide films presenting phase transition were fabricated on ordinary glass substrates by using the oxidation and reduction methods respectively with MS500 B magnetron sputtering machine The resistance temperature (R T) curves of the samples were measured by using XMT 100 digital thermometer and SX1934 digital four probe tester with the reciprocal temperature change from 20 ℃ to 80 ℃. The results show that both samples have the characteristics of phase transition; the resistance of sample fabricated by oxidation method changed from 9.96 0.06 kΩ, with a phase transition temperature of about 30 ℃; and the resistance of sample fabricated by reduction method changed from 80.3 7.4 kΩ, with a phase transition temperature of about 52 ℃.

    参考文献
    相似文献
    引证文献
引用本文

乔亚,俞红兵,齐博蕾,路远,凌永顺.磁控溅射氧化钒相变薄膜的电阻温度特性测量[J].压电与声光,2014,36(2):202-204. QIAO Ya, YU Hongbing, QI Bolei, LU Yuan, LING Yongshun. The Resistance temperature Curve Measurement of Magnetron Sputtering Vanadium Dioxide Film Presenting a Phase Transition[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

复制
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
历史
  • 收稿日期:
  • 最后修改日期:
  • 录用日期:
  • 在线发布日期: 2014-03-14
  • 出版日期: