Three kinds of structures were prepared by high vacuum magnetron sputtering technology:NiFe/IrMn films and IrMn/NiFe firms without buffer layer;and IrMn/NiiFe films with buffer layer respectively.The magnetic properties were tested with a vibrating sample magnetometer.Result showed that large exchange bias existed both in NiFe/IrMn which was deposited directly on Si,and also in IrMn/NiFe biolayer structure which were deposited on proper thickness of Ta/NiFe Layer or Cu layer. Such large exchange bias was the most suitable for top and bottom pinned spin valve giant magnetoresistance device.