This article have studied the effects of the single event transient on the ferroelectric memory cell with circuit simulation.Combined with the effects of the single event effect(SEE) on MOS devices,the effect of single event on the memory cell has been simulated by using the current to simulate the single event.The simulation results show that the higher and longer the peak pulse current,the ferroelectric memory cell flips more easily.After analysis,the flip of ferroelectric memory cell is decided by the charge accumulation per unit area on the ferroelectric capacitor. At last , the cause of the fillip has been analyzed.