乐甫波器件温度特性实验研究
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An Experimental Study on the Temperature Characteristics of Love Wave Devices
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    摘要:

    研究了基于ST-90°-X石英基片和SU-8波导层的乐甫波器件的温度特性。采用电极宽度控制单向单相(EWC/SPUDT)结构和铝电极,设计制作了具有单一模式控制功能和低插入损耗的150 MHz剪切型声表面波(SH-SAW)延迟线器件,并在其表面涂覆不同膜厚的SU-8声波导层构成系列乐甫波器件。由于SU-8波导层与石英基片温度系数的相反极性特性,SU-8膜厚直接影响到了乐甫波器件的温度特性。实验发现,覆盖不同膜厚的SU 8的乐甫波器件的中心频率随温度呈非线性变化,且在60~80 ℃内,SU-8膜厚为0.95 μm时,其频率温度系数约为0.830×10-6/℃。

    Abstract:

    This paper experimentally investigated the temperature characteristics of Love wave devices on ST 90°-X quartz/SU-8 structure. The electrode width controlled single phase unidirectional distributed transducer (EWC / SPUDT) technique was used for the device design and the 150 MHz SH-SAW delay line devices with Al metallization were fabricated with single mode feature and low insertion loss. Series of Love wave devices were developed using SU 8 guiding layer. Since the SU 8 guiding layer and ST-90°-X-quartz have complementary temperature coefficient of frequency (TCF), the thickness of SU 8 film significantly affects the temperature characteristics of Love wave devices. The experimental results showed that the non linear temperature characteristics of Love wave devices, and TCF was observed and the temperature coefficient of frequency (TCF) was about 0.830×10-6/℃ with the film thickness of 0.95 μm from temperature of 60 ℃ to 80 ℃. The proposed Love wave devices showed a good prospect for physical or chemical sensors in the high temperature using the Love wave device developed in this paper.

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陈桂,谢晓,王文,何世堂.乐甫波器件温度特性实验研究[J].压电与声光,2015,37(2):193-196. CHEN Gui, XIE Xiao, WANG Wen, HE Shitang. An Experimental Study on the Temperature Characteristics of Love Wave Devices[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2015-03-30
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