Ba4Nd9.33Ti18O54(BNT) thin films were obtained on Si and Pt/Ti/SiO2/Si substrates by Sol-Gel technique. The effects of annealing temperature on crystallinity and morphological characteristic were investigated by Xray diffraction (XRD) and scanning electron microscope (SEM). The results showed that a porous and well crystallized thin film with a tungsten bronze structure was obtained by annealing these films at 950 ℃ for 2 h. After doped with 2% B2O3-2SiO2, the crystallization temperature was reduce to 900 ℃. The dielectric characteristics measurement showed that the dielectric constant and the dielectric loss of the BNT thin films were 45 and 1.1% at 1 MHz frequency, the leakage current density was 4.13×10-6 A/cm2 at bias of 30 V.