The PT/PZT（PbTiO3/Pb(Zr0.52Ti0.48)O3）multilayered thin films deposited on Pt/Ti/SiO2/Si substrates is prepared by Sol-Gel method. The influence of different annealing time on the nanostructure, crystal orientation and phase change characteristics is analyzed. The influence of different annealing time on nanostructure using FESEM and on the crystal orientation and phase change characteristics using XRD and Raman are measured separately. The test result reveals that at elevated annealing time, the thin film will transform from trigonal phase into tetragonal phase, and have a preferred orientation of (110). The optimized annealing time is found to be 20 min, at which the thin film possesses perfect crystallization, uniform grain size and pure perovskite phase. It is expected that this kind of thin film can be used in MEMS devices.