The PZT thin film is an ideal material for fabricating MEMS vibration energy harvester because of it′s excellent piezoelectric properties.The residual stress generated in the preparation of PZT thin films with the SolGel process has negative effects on the energy collector.In this paper, the residual stress in PZT thin film with Nb and Co dopants was measured by the X ray diffraction method,and the film samples were annealed at 650 ℃,700 ℃,750 ℃,800 ℃ respectively.The results show that the residual stress in the PZT thin film samples is compressive stress.From 650 ℃ to 750 ℃,the residual stress in the films will be increased with the addition of annealing temperature. The residual stress will be remained stable when the annealing temperature is about 750 ℃.