As silicon substrate has low fracture toughness, piezoelectric thick film is benefit to improve power output of energy harvester, an energy harvester with 304 stainless steel substrate and PZT thick film was proposed in this paper. The 304 stainless steel sheet was used as the substrate and the bottom electrode, the metal Pt/Ti structure was used as the top electrode. The stainless steel substrate is 30 μm in thickness, 5 μmthick piezoelectric material was fabricated by electrohydrodynamic atomization deposition, and the excellent (110) crystal orientations perovskite structure was obtained by means of piezoelectric material′s XRD characterizing. The piezoelectric cantilever energy harvester with length of 20 mm and width of 5 mm has been designed. The energy harvesting experiment showed the harvester could get 1.3 V open circuit voltage peakpeak value under the 81 Hz resonance frequency and 0.69g（g=9.8 m/s2） acceleration, the maximum output power was 0.758 μW at the load resistor of 260 kΩ, the power density is 3.19 mW·cm-3·g-2.