Ta、Nb掺杂Bi3.15Nd0.85Ti3O12陶瓷铁电介电性能研究
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广西科学研究与技术开发计划基金资助项目(桂科攻03300036)

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Study on Dielectric Properties of Ta/Nb Doping Bi3.15Nd0.85Ti3O12 Ferroelectric Ceramics
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    摘要:

    采用传统固相烧结工艺制备了掺杂Ta、Nb的Bi3.15Nd0.85Ti3O12材料,构成Bi3.15Nd0.85Ti3-2xTaxNbxO12(x=0,0.02,0.04,0.06)铁电陶瓷。研究了Ta、Nb掺杂对Bi3.15Nd0.85Ti3O12陶瓷晶体结构和铁电性能的影响。结果表明,Ta、Nb掺杂未改变Bi3.15Nd0.85Ti3O12陶瓷的钙钛矿晶体结构,剩余极化值提高,具有较好电滞回线(Pr-Ec)。在电压为45 V、测试频率为0.1 kHz下,Bi3.15Nd0.85Ti3-2xTaxNbxO12铁电陶瓷的剩余极化强度(2Pr)及矫顽场强(2Ec)可分别达到25.07 μC/cm2和31.1 kV/cm,电容-电压(C-V)曲线呈标准的蝴蝶形。

    Abstract:

    Bi3.15Nd0.85Ti3O12 ceramics with Ta/Nb doping were prepared to construct Bi3.15Nd0.85Ti3-2xTaxNbxO12 (x= 0,0.02,0.04,0.06) ferroelectric ceramics by using the conventional solid phase sintering process . The influence of Ta/Nb doping on the crystal structure and electric properties of the Bi3.15Nd0.85Ti3O12 ceramics. Results showed that the Ta/Nb doping could not change the perovskite crystal structure of Bi3.15Nd0.85Ti3O12 ceramic, the residual polarization value was increased significantly, and the electric hysteresis loop (Pr-Ec) was good. The remaining polarization (2Pr) and coercive field strength (2Ec) of Bi3.15Nd0.85Ti3-2xTaxNbxO12 are 25.07 μC/cm2 and 31.1 kV/cm respectively at the voltage of 45 V and test frequency of 0.1 kHz and the C-V curve presented the standard butterfly.

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王宁章,容世龙,刘世丰. Ta、Nb掺杂Bi3.15Nd0.85Ti3O12陶瓷铁电介电性能研究[J].压电与声光,2016,38(2):271-274. WANG Ningzhang, RONG Shilong, LIU Shifeng. Study on Dielectric Properties of Ta/Nb Doping Bi3.15Nd0.85Ti3O12 Ferroelectric Ceramics[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2016-04-01
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