高发光均匀性Ce:LSO闪烁晶体的研制
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Growth of Ce:LSO Scintillation Crystal With High LightOutput Uniformity
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    摘要:

    采用提拉法生长了尺寸为65 mm×200 mm的Ce:LSO闪烁晶体,在研究高发光均匀性机理的基础上,利用正交试验生长不同铈掺杂浓度、二氧化硅补偿浓度及结晶率的Ce:LSO晶体。结合晶体头尾相对发光强度、发光不均匀性等测试结果,确定了合适的原料配比和结晶率等相关参数,即铈离子掺杂浓度为0.16%、二氧化硅补偿浓度0.20%、结晶分数60%。通过以上研究结果表明,该尺寸晶体的发光均匀性超过96%。

    Abstract:

    The dimension of 65 mm×200 mm ceriumdoped lutetium oxyorthosilicate crystals were grown by the Czochralski method. Based on the study of high lightoutput uniformity mechanism, the orthogonal experiment was adopted to grow Ce:LSO crystals with different cerium concentrations, SiO2 compensated concentrations and crystallization ratio. Considering the result of relative light output and uniformity from head and bottom, the appropriate parameters of raw material ratio and crystallinity were demonstrated, that is, the ceriumdoped concentration is 0.16%, the SiO2 compensated compensated is 0.20% and the crystallization ratio is 60%. The test results show that the lightoutput uniformity can be increase to more than 96%.

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王佳,岑伟,徐扬,胡少勤,石自彬,付昌禄.高发光均匀性Ce:LSO闪烁晶体的研制[J].压电与声光,2016,38(3):405-408. WANG Jia, CEN Wei, XU Yang, HU Shaoqin, SHI Zibin, FU Changlu. Growth of Ce:LSO Scintillation Crystal With High LightOutput Uniformity[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2016-05-31
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