The Love wave device with ZnO waveguide layer on LiNbO3 substrate with IDT has been prepared by using the ZnO as the target and the radio frequency magnetron sputtering technology. In the preparation procedure, the vacuum degree was up to 4.0×10-4 Pa, the sputtering pressure was 5.4 Pa, the sputtering time was 400 min and the sputtering temperature was 150 ℃. The ZnO waveguide layer is investigated by Xray diffraction in order to analysis the crystallographic orientation and the microstructure, and the network analyzer is used to analyze the response characteristics of Love wave device with ZnO waveguide layer. The results show that the prepared ZnO waveguide layer has higher （002）preferential orientation. The average grain size is 50.99 nm and it has smaller internal stress. The center frequency of Love wave device with ZnO waveguide layer is 101.764 MHz, and it has low insertion loss of 21.2 dB and good response characteristics.