The solid mounted film bulk acoustic resonator shows a broad application prospects for the high band pass filter of future communication equipments and the internet of things (IoT) sensors due to its excellent mechanical strength, small size and 3D integration on silicon with ordinary IC. In this paper solid mounted resonator film bulk acoustic resonators (SMRFBARs) were fabricated on the Mgdoped ZnO (MgxZn1-xO ) substrate prepared by RF magnetron sputtering. The influence of Mgdoped ZnO on the resonator properties were studied by XRD and via the network analyzer measurements. The microstructure characterization of the prepared FBAR was also carried out by field emission scanning electron microcopy (FESEM). The effects of ZnO target materials with different Mg dopant contents on the crystal orientation and resonant performance have been carried out and compared. The high quality FBAR with resonant frequency of 1.8~2.4 GHz,Q of 800 and return loss of -30 dB has been fabricated through optimizing the conditions.