The lead lanthanum zirconate titanate(PLZT) antiferroelectric thin film with different Pb excess (0%、10%、15%) and PZT buffer layer of different thickness (0、100 nm、500 nm)was deposited on Pt/Ti/SiO2/Si substrates using SolGel method, The microstructure properties of the PLZT thin film were studied with Xray diffraction, atom force microscope. The results show that the 10% Pb excess has contribute to the formation of the perovskite structure, and the larger grain size and ideal roughness. The introduction of 100 nm PZT buffer layer is conducive to the crystallization of the PLZT thin film, which with a more compact and better crystalline state.