The silicon-based MEMS pressure sensor with interdigital electrode structure has been fabricated by using the PZT piezoelectric film and the optimized MEMS micromachining process. The PZT piezoelectric thin film with thickness of 1.2 μm on the substrate of Au/Ti/LNO/SiO2/Si<100> was fabricated by using the Sol-Gel method and annealing at a temperature of 650 ℃ through the hierarchical annealing method. The film surface was uniform without crack. The parallel interdigital electrode was fabricated by using the lithography process and low pressure sputtering process.The micro pressure sensor with PZT piezoelectric thin film structure has been implemented. The pressure was applied to the elastic thin film and the voltage output performance was good. It indicates that the interdigital electrode structure based on the piezoelectric thin film is feasible, and this lays a theoretical foundation for the fabrication of micro pressure sensors based on the nanofiber structure.