p型掺杂ZnO薄膜的光致发光特性研究
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安徽省重点研究与开发计划基金资助项目(1704a0902010,1704a0902014)

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Study on the Photoluminescence Properties of ptype Doped ZnO Films
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    摘要:

    采用磁控溅射技术,以N2作为p型掺杂源,制备p型N掺杂ZnO薄膜,着重研究了不同掺杂量的N掺杂ZnO薄膜的光学特性。结果表明,掺杂ZnO薄膜在360 nm、380 nm处出现主荧光峰,409 nm、440 nm处出现次荧光峰,而且随着N掺杂量的不同,主、次荧光峰峰位和强度都会发生变化。当O2∶N2的体积流量比为15∶5时,薄膜中N含量最大,荧光谱中发光峰强度最佳,霍尔效应检测薄膜具有明显的p型导电特征。

    Abstract:

    The ptype Ndoped ZnO thin films are prepared by the magnetron sputtering method with N2 as ptype doping source.The optical properties of Ndoped ZnO films with different doping amounts are studied.The results show that there are two primary and secondary fluorescence peaks at 360 nm and 380 nm,409 nm and 440 nm respectively,and the peak and intensity of the fluorescence peaks will change with different doping amounts of N in the ZnO films.When the flow volume ratio of O2∶N2 is 15∶5,the content of N in the film is maximum, and the intensity of luminescence peak in the fluorescence spectrum is the best.The Hall effect detection shows that the film has obvious ptype conductivity.

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沈洪雪,马俊,姚婷婷,李刚. p型掺杂ZnO薄膜的光致发光特性研究[J].压电与声光,2018,40(4):503-506. SHEN Hongxue, MA Jun, YAO Tingting, LI Gang. Study on the Photoluminescence Properties of ptype Doped ZnO Films[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2018-08-13
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