The transparent and conductive Aldoped ZnO (AZO) thin films were prepared on glass substrate by using Al and ZnO ceramics as the sputtering targets by DC and RF dualtarget magnetron cosputtering. The influence of substrate temperature on microstructure and photoelectric properties of AZO thin films were characterized and analyzed by Xray photoelectron spectroscopy, Xray diffraction, scanning electron microscope, atomic force microscope, ultraviolet spectrophotometer and Hall Effect measurement instrument, and the effects of different substrate temperature on the photoelectric properties of AZO thin film have been investigated. The results show that the prepared AZO thin films have hexagonal crystal structure with caxis orientation. The AZO thin film has the best crystalline quality at a substrate temperature of 300 ℃, and the resistivity is at least 1.43×10-3 Ω·cm. The average optical transmittance of all the sample thin films are over 90％ in the range of 380~780 nm. The absorption edge of AZO thin films appears blue shift with the increase of substrate temperature.