Aiming at the problem of small tuning range of film bulk acoustic resonator (FBAR), a novel voltage tuned FBAR structure was proposed. A layer of doped AlN semiconductor (nAlN) film was introduced between the piezoelectric film and the bottom electrode of the traditional FBAR. The COMSOL Multiphysics was used to model and simulate the novel FBAR, the obtained resonant frequency is 1.92 GHz, and the parasitic resonance peak exists in the impedance characteristic curve, which is optimized by adjusting thickness of the top electrode structure. The result shows that when the thickness of the top electrode is 0.1 μm, the parasitic resonance peak disappears, and the resonant frequency of the device is 1.976 GHz, the overall performance of the device after thickness adjustment of the top electrode is greatly improved. The electronic tuning simulation analysis of the optimized FBAR shows that the tuning amount is 600 kHz/V, which is greatly improved compared with the traditional FBAR of 150 kHz/V. In addition, the simulation results show that the resonance frequency is exponentially positively correlated with the external tuning voltage.