CaBi2Ta2O9基压电陶瓷的A位掺杂改性研究
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国家自然科学基金资助项目(61201064)

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Study on ASite Doping Modification of CaBi2Ta2O9 Based Piezoelectric Ceramics
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    摘要:

    该文采用固相反应法制备了铋层状结构Ca1-x(LiCe)x/2Bi2Ta2O9(CBTLC100x)高居里温度(TC)压电陶瓷,研究了(Li0.5Ce0.5)2+复合离子掺杂对CaBi2Ta2O9(CBT)基陶瓷晶体结构、介电、压电等性质的影响。结果表明,在选定(Li0.5Ce0.5)2+掺杂浓度范围内,CBTLC100x陶瓷呈正交晶体结构。随着x增加,TC趋于降低,从941 ℃降低至924 ℃。Ce离子的施主掺杂效应有利于电阻率及压电活性的提高,当x=0.06(x为摩尔分数)时,具有最优综合性能,TC约为924 ℃,压电常数d33约为8.1 pC/N, 650 ℃时电阻率为1.7×106 Ω·cm。

    Abstract:

    The bismuth layered structure Ca1-x(LiCe)x/2Bi2Ta2O9(CBTLC100x) piezoelectric ceramics with high Curie temperature were synthesized by the solidstate reaction method. The effects of (Li0.5Ce0.5)2+ complex ions doping on the structure, dielectric and piezoelectric properties of the CaBi2Ta2O9 (CBT)based ceramic crystal were investigated. The results showed that the CBTLC100x ceramics exhibited the orthorhombic crystal structure in the selected range of doping concentration. With the increase of x, the Curie temperature (TC) tended to decrease from 941 ℃ to 924 ℃. The donor doping effect of Ce ion is beneficial to the improvement of the resistivity and piezoelectric activity. When x=0.06 (x denotes molar fraction), the prepared ceramic exhibited the optimum comprehensive performance, TC is about 924 ℃, piezoelectric constant d33 is about 8.1 pC/N, and the resistivity is 1.7×106 Ω·cm at 650 ℃.

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钟建强,王丹,石钰琳,陈强. CaBi2Ta2O9基压电陶瓷的A位掺杂改性研究[J].压电与声光,2019,41(4):504-508. ZHONG Jianqiang, WANG Dan, SHI Yulin, CHEN Qiang. Study on ASite Doping Modification of CaBi2Ta2O9 Based Piezoelectric Ceramics[J]. PIEZOELECTRICS AND ACOUSTOOPTICS

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  • 在线发布日期: 2019-08-26
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