In this paper, the PZT thin film samples with La doped Pb1-0.05La0.05ZrTiO3(PLZT), Sr doped Pb1-0.05Sr0.05ZrTiO3(PSZT), La and Sr codoped Pb1-0.1La0.05Sr0.05ZrTiO3(PLSZT) as well as undoped PZT thin film were prepared by SolGel method on LaNiO3/Pt/Ti/SiO2/Si substrate. The piezoelectric coefficients, hysteresis loops and dielectric properties of the samples with different doping conditions were tested. The results show that the PLSZT thin films have better ferroelectric properties with the residual polarization intensity (Pr) of 13.2 μC/cm2, the saturated polarization intensity (Ps) of 28.413.2 μC/cm2, and the coercive field (Ec) of 54.8 kV/cm over other samples, and the piezoelectric coefficient (d33) of doubledoped PLST is also higher than that of the other three samples, reaching 153 pC/N. The dielectric constant of the doped sample is slightly higher than that of the undoped sample, and the dielectric property of the singledoped La sample(PLZT) is more stable at high frequency environment.